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Transistor and Photovoltaic Output Photocouplers FOD817B3S
onsemi
FOD817B3S
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Optoelectronics
Transistor and Photovoltaic Output Photocouplers
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| Standard | UL|DIN |
| ECCN (US) | EAR99 |
| Packaging | Box |
| Pin Count | 4 |
| Automotive | No |
| Input Type | DC |
| Lead Shape | Gull-wing |
| Output Type | DC |
| PCB changed | 4 |
| Part Status | Active |
| Output Device | Transistor |
| Package Width | 7(Max) |
| Package Height | 4(Max) |
| Package Length | 5.1(Max) |
| Supplier Package | PDIP SMD Black |
| Standard Package Name | DIP SMD |
| Maximum Fall Time (us) | 18 |
| Maximum Rise Time (us) | 18 |
| Typical Fall Time (us) | 3 |
| Typical Rise Time (us) | 4 |
| Maximum Forward Voltage (V) | 1.4 |
| Maximum Reverse Voltage (V) | 6 |
| Number of Channels per Chip | 1 |
| Typical Forward Voltage (V) | 1.2 |
| Maximum Forward Current (mA) | 50 |
| Maximum Collector Current (mA) | 50 |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Isolation Voltage (Vrms) | 5000 |
| Maximum Current Transfer Ratio (%) | 260 |
| Minimum Current Transfer Ratio (%) | 130 |
| Maximum Operating Temperature (°C) | 110 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| Current Transfer Ratio Test Current (mA) | 5 |
| Maximum Collector-Emitter Saturation Voltage (mV) | 200 |
| Description |
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