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Transistor and Photovoltaic Output Photocouplers CNY65BEXI
Vishay
CNY65BEXI
--
Optoelectronics
Transistor and Photovoltaic Output Photocouplers
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| Standard | VDE|ATEX|DIN|EN |
| ECCN (US) | EAR99 |
| Pin Count | 4 |
| Automotive | No |
| Input Type | DC |
| Lead Shape | Through Hole |
| Output Type | DC |
| PCB changed | 4 |
| Part Status | Active |
| Output Device | Transistor |
| Package Width | 9.6 |
| Package Height | 6.1 |
| Package Length | 17.8 |
| Supplier Package | PDIP |
| Standard Package Name | DIP |
| Typical Fall Time (us) | 2.4 |
| Typical Rise Time (us) | 2.4 |
| Maximum Forward Voltage (V) | 1.6 |
| Maximum Reverse Voltage (V) | 5 |
| Number of Channels per Chip | 1 |
| Typical Forward Voltage (V) | 1.25 |
| Maximum Forward Current (mA) | 75 |
| Maximum Collector Current (mA) | 50 |
| Maximum Power Dissipation (mW) | 250 |
| Minimum Isolation Voltage (Vrms) | 8120 |
| Maximum Current Transfer Ratio (%) | 300 |
| Minimum Current Transfer Ratio (%) | 100 |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 32 |
| Current Transfer Ratio Test Current (mA) | 10 |
| Maximum Collector-Emitter Saturation Voltage (mV) | 300 |
| Description |
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