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CY7S1061GE30-10BVM
CY7S1061GE30-10BVM
SRAM Chip CY7S1061GE30-10BVM
Cypress
CY7S1061GE30-10BVM
--
Memory
SRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.41
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)3A001.A.2.C
PackagingTray
Pin Count48
AutomotiveNo
Lead ShapeBall
PCB changed48
Part StatusActive
Timing TypeAsynchronous
Package Width6
Package Height0.81(Max)
Package Length8
Number of Ports1
Number of Words1M
Supplier PackageVFBGA
Chip Density (bit)16M
Process Technology65nm
Max. Access Time (ns)10
Data Rate ArchitectureSDR
Operating Current (mA)110
Address Bus Width (bit)20
Number of Bits/Word (bit)16
Supplier Temperature GradeMilitary
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.2
Typical Operating Supply Voltage (V)2.5|3|3.3
Description
SRAM Chip Async Single 2.5V/3V/3.3V 16M-bit 1M x 16 10ns 48-Pin VFBGA Tray
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