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STAC9200
STAC9200
RF FETs STAC9200
STMicroelectronics
STAC9200
--
Diodes, Transistors and Thyristors
RF FETs
STAC9200.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height5.33(Max)
Package Length34.19(Max)
Output Power (W)230(Typ)
Supplier PackageSTAC244B
Maximum IDSS (uA)1
Process TechnologyLDMOS
Maximum Frequency (MHz)1300
Typical Power Gain (dB)15
Number of Elements per Chip2
Typical Drain Efficiency (%)50(Min)
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)2.5(Min)
Typical Input Capacitance @ Vds (pF)113@32V
Typical Output Capacitance @ Vds (pF)57@32V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)1.2@32V
Description
Trans RF FET N-CH 80V 3-Pin STAC244B Loose
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