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ST9060C
ST9060C
RF FETs ST9060C
STMicroelectronics
ST9060C
--
Diodes, Transistors and Thyristors
RF FETs
ST9060C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Min)
ConfigurationSingle
Package Width6.1(Max)
Package Height4.45(Max)
Package Length20.57(Max)
Output Power (W)80(Typ)
Supplier PackageCase M-243
Process TechnologyLDMOS
Maximum Frequency (MHz)1500
Typical Power Gain (dB)17.3
Number of Elements per Chip1
Typical Drain Efficiency (%)70
Maximum Power Dissipation (mW)170000
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)90
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)73@28V
Typical Output Capacitance @ Vds (pF)24@28V
Typical Reverse Transfer Capacitance @ Vds (pF)1.6@28V
Description
Trans RF MOSFET N-CH 90V 12A 3-Pin Case M-243 Loose
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