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RF FETs SD2933-03
STMicroelectronics
SD2933-03
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Loose |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 3(Min) |
| Configuration | Single Triple Source |
| Output Power (W) | 400(Typ) |
| Maximum Frequency (MHz) | 150 |
| Typical Power Gain (dB) | 23.5 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 65 |
| Maximum Power Dissipation (mW) | 648000 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 125 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 40 |
| Typical Forward Transconductance (S) | 10(Min) |
| Typical Input Capacitance @ Vds (pF) | 1000@50V |
| Typical Output Capacitance @ Vds (pF) | 372@50V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 29@50V |
| Description |
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