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RF FETs PXFC193808SVV1R250XTMA1
Infineon
PXFC193808SVV1R250XTMA1
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Output Power (W)380
Maximum IDSS (uA)10
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)1880
Minimum Frequency (MHz)1805
Typical Power Gain (dB)21
Number of Elements per Chip2
Typical Drain Efficiency (%)30.3
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (MOhm)190(Typ)@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V T/R
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