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PTFB091802FCV1XWSA1
PTFB091802FCV1XWSA1
RF FETs PTFB091802FCV1XWSA1
Infineon
PTFB091802FCV1XWSA1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.78
Package Height3.76
Package Length20.57
Output Power (W)180
Supplier PackageCase H-37248
Maximum IDSS (uA)10
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)960
Minimum Frequency (MHz)920
Typical Power Gain (dB)19.5
Number of Elements per Chip2
Typical Drain Efficiency (%)34
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (MOhm)150(Typ)@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET 65V 5-Pin Case H-37248 Tray
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