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RF FETs PTFA092213ELV4XWSA1
Infineon
PTFA092213ELV4XWSA1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Output Power (W)220
Mode of Operation2-Carrier W-CDMA|CW
Process TechnologyLDMOS
Maximum Frequency (MHz)960
Minimum Frequency (MHz)920
Typical Power Gain (dB)17.5
Number of Elements per Chip1
Typical Drain Efficiency (%)29
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (MOhm)40(Typ)@10V
Description
Trans RF FET N-CH 65V Tray
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