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RF FETs PTFA082201EV4XWSA1
Infineon
PTFA082201EV4XWSA1
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Single |
| Package Width | 13.72 |
| Package Height | 4.11 |
| Package Length | 34.04 |
| Output Power (W) | 220 |
| Supplier Package | Case 36260 |
| Mode of Operation | 2-Carrier W-CDMA|2-Tone |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 894 |
| Minimum Frequency (MHz) | 869 |
| Typical Power Gain (dB) | 18 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 43 |
| Maximum Power Dissipation (mW) | 700000 |
| Maximum Gate Source Voltage (V) | 12 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Drain Source Resistance (MOhm) | 40(Typ)@10V |
| Description |
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