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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PTF180101M V1
PTF180101M V1
RF FETs PTF180101M V1
Infineon
PTF180101M V1
--
Diodes, Transistors and Thyristors
RF FETs
PTF180101M V1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count10
AutomotiveNo
Lead ShapeGull-wing
PCB changed10
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle Hex Gate Quint Drain
Package Width3
Package Height0.85
Package Length3
Output Power (W)10
Supplier PackageTSSOP
Mode of Operation2-Tone
Process TechnologyLDMOS
Standard Package NameSOP
Maximum Frequency (MHz)2000
Minimum Frequency (MHz)1000
Typical Power Gain (dB)16.5(Min)
Number of Elements per Chip1
Typical Drain Efficiency (%)35
Maximum Power Dissipation (mW)18800
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (MOhm)830(Typ)@10V
Description
Trans RF MOSFET N-CH 65V 10-Pin TSSOP
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