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PD85006TR-E
PD85006TR-E
RF FETs PD85006TR-E
STMicroelectronics
PD85006TR-E
--
Diodes, Transistors and Thyristors
RF FETs
PD85006TR-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.4
Package Height3.5
Package Length9.5
Output Power (W)6(Typ)
Supplier PackagePowerSO-10RF (Formed lead)
Process TechnologyLDMOS
Standard Package NamePowerSO-10RF (Formed lead)
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1000
Typical Power Gain (dB)17
Number of Elements per Chip1
Typical Drain Efficiency (%)63
Maximum Power Dissipation (mW)36500
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)40
Maximum Operating Temperature (°C)165
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)16@13.6V
Description
Trans RF FET N-CH 40V 2A 3-Pin PowerSO-10RF (Formed lead) T/R
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