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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PD57006S-E
PD57006S-E
RF FETs PD57006S-E
STMicroelectronics
PD57006S-E
--
Diodes, Transistors and Thyristors
RF FETs
PD57006S-E.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10(Min)
ConfigurationSingle
Package Width9.4
Package Height3.5
Package Length9.5
Output Power (W)6(Min)
Supplier PackagePowerSO-10RF (Straight lead)
Process TechnologyLDMOS
Standard Package NamePowerSO-10RF (Straight lead)
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)945
Typical Power Gain (dB)15
Number of Elements per Chip1
Typical Drain Efficiency (%)50
Maximum Power Dissipation (mW)20000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)165
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)1
Typical Forward Transconductance (S)0.58
Typical Input Capacitance @ Vds (pF)27@28V
Typical Output Capacitance @ Vds (pF)14@28V
Typical Reverse Transfer Capacitance @ Vds (pF)0.9@28V
Description
Trans RF FET N-CH 65V 1A 3-Pin PowerSO-10RF (Straight lead) Tube
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