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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PD55008L-E
PD55008L-E
RF FETs PD55008L-E
STMicroelectronics
PD55008L-E
--
Diodes, Transistors and Thyristors
RF FETs
PD55008L-E.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count14
AutomotiveNo
PCB changed14
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Min)
ConfigurationSingle Triple Drain Triple Gate Quad Source
Package Width5
Package Height0.88
Package Length5
Output Power (W)8(Min)
Supplier PackagePower Flat
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Typical Power Gain (dB)19
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Typical Drain Efficiency (%)63
Maximum Power Dissipation (mW)19500
Maximum Gate Source Voltage (V)±15
Maximum Drain Source Voltage (V)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)5
Typical Forward Transconductance (S)1.6
Typical Input Capacitance @ Vds (pF)53@12.5V
Typical Output Capacitance @ Vds (pF)38@12.5V
Typical Reverse Transfer Capacitance @ Vds (pF)3.2@12.5V
Description
Trans RF MOSFET N-CH 40V 5A 14-Pin Power Flat T/R
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