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MW6S004NT1
MW6S004NT1
RF FETs MW6S004NT1
NXP
MW6S004NT1
--
Diodes, Transistors and Thyristors
RF FETs
MW6S004NT1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeNo Lead
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle Dual Source
Package Width5.97(Max)
Package Height1.83(Max)
Package Length6.73(Max)
Output Power (W)4(Typ)
Supplier PackagePLD-1.5
Maximum IDSS (uA)10
Mode of Operation2-Tone
Process TechnologyLDMOS
Standard Package NamePLD-1.5
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)2000
Minimum Frequency (MHz)1
Typical Power Gain (dB)19
Number of Elements per Chip1
Typical Drain Efficiency (%)33
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)30@28V
Typical Output Capacitance @ Vds (pF)25@28V
Maximum Gate Source Leakage Current (nA)500
Typical Reverse Transfer Capacitance @ Vds (pF)21@28V
Description
Trans RF FET N-CH 68V 4-Pin PLD-1.5 T/R
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