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RF FETs MRFX1K80H-128MHZ
NXP
MRFX1K80H-128MHZ
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8473.30.11.80 |
| PPAP | No |
| Type | MOSFET |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | 3B992 |
| Pin Count | 5 |
| Automotive | No |
| PCB changed | 5 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 65 |
| Package Width | 10.29(Max) |
| Package Height | 4.83(Max) |
| Package Length | 41.28(Max) |
| Output Power (W) | 1800(Typ) |
| Supplier Package | NI-1230H |
| Mode of Operation | Pulse |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 400 |
| Minimum Frequency (MHz) | 1.8 |
| Typical Power Gain (dB) | 25.1 |
| Typical Drain Efficiency (%) | 75.1 |
| Maximum Power Dissipation (mW) | 2247000 |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum Drain Source Voltage (V) | 179 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Typical Forward Transconductance (S) | 44.7 |
| Typical Input Capacitance @ Vds (pF) | 760@65V |
| Typical Output Capacitance @ Vds (pF) | 203@65V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.9@65V |
| Description |
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