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MRFX1K80GNR5
MRFX1K80GNR5
RF FETs MRFX1K80GNR5
NXP
MRFX1K80GNR5
--
Diodes, Transistors and Thyristors
RF FETs
MRFX1K80GNR5.pdf
Specification
Product AttributeAttribute Value
SVHCYes
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Package Width10.01(Max)
Package Height3.86(Max)
Package Length32.33(Max)
Output Power (W)1800(Typ)
Supplier PackageCase OM-1230G
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)400
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)24.4
Typical Drain Efficiency (%)75.7
Maximum Power Dissipation (mW)3333000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)179
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)44.7
Typical Input Capacitance @ Vds (pF)765@65V
Typical Output Capacitance @ Vds (pF)216@65V
Typical Reverse Transfer Capacitance @ Vds (pF)5.6@65V
Description
Trans RF FET N-CH 179V 5-Pin Case OM-1230G T/R
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