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MRFE6VP6600GNR3
MRFE6VP6600GNR3
RF FETs MRFE6VP6600GNR3
NXP
MRFE6VP6600GNR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Output Power (W)600(Typ)
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)600
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)24.7
Typical Drain Efficiency (%)73.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)28
Typical Input Capacitance @ Vds (pF)290@50V
Typical Output Capacitance @ Vds (pF)98@50V
Typical Reverse Transfer Capacitance @ Vds (pF)2.4@50V
Description
Trans RF FET N-CH 133V 4-Pin T/R
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