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RF FETs MRFE6S9125NBR1
NXP
MRFE6S9125NBR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 5 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Single Dual Drain Dual Gate |
| Package Width | 9.07(Max) |
| Package Height | 2.64(Max) |
| Package Length | 23.67(Max) |
| Output Power (W) | 125 |
| Supplier Package | TO-272 W |
| Mode of Operation | 1-Carrier N-CDMA|GSM|GSM EDGE |
| Process Technology | LDMOS |
| Standard Package Name | TO-272 W |
| SVHC Exceeds Threshold | Yes |
| Maximum Frequency (MHz) | 1000 |
| Typical Power Gain (dB) | 19|20|20.2 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 62 |
| Maximum Gate Source Voltage (V) | 12 |
| Maximum Drain Source Voltage (V) | 66 |
| Maximum Operating Temperature (°C) | 225 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Input Capacitance @ Vds (pF) | 350@28V |
| Typical Output Capacitance @ Vds (pF) | 64@28V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.9@28V |
| Description |
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