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MRF9180R6
MRF9180R6
RF FETs MRF9180R6
NXP
MRF9180R6
--
Diodes, Transistors and Thyristors
RF FETs
MRF9180R6.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height5.08(Max)
Package Length41.28(Max)
Output Power (W)170
Supplier PackageNI-1230
Mode of OperationCDMA
Maximum Frequency (MHz)895
Minimum Frequency (MHz)865
Typical Power Gain (dB)17.5
Number of Elements per Chip1
Typical Drain Efficiency (%)55
Maximum Power Dissipation (mW)388000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)6
Typical Output Capacitance @ Vds (pF)77@26V
Typical Reverse Transfer Capacitance @ Vds (pF)3.8@26V
Description
Trans RF MOSFET N-CH 65V 5-Pin NI-1230 T/R
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