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RF FETs MRF8P20140WHSR3
NXP
MRF8P20140WHSR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| PCB changed | 5 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Dual Common Source |
| Package Width | 9.91(Max) |
| Package Height | 4.32(Max) |
| Package Length | 20.7(Max) |
| Output Power (W) | 24(Typ) |
| Supplier Package | Case 465H-02 |
| Maximum IDSS (uA) | 10 |
| Mode of Operation | 1-Carrier W-CDMA |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 2025 |
| Minimum Frequency (MHz) | 1880 |
| Typical Power Gain (dB) | 16 |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 41.2 |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Gate Threshold Voltage (V) | 2.6 |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Description |
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