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MRF7S19100NR1
MRF7S19100NR1
RF FETs MRF7S19100NR1
NXP
MRF7S19100NR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle Dual Drain Dual Gate
Package Width9.07(Max)
Package Height2.64(Max)
Package Length17.58(Max)
Output Power (W)100
Supplier PackageTO-270 W
Mode of Operation1-Carrier W-CDMA
Standard Package NameTO-270 W
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1990
Minimum Frequency (MHz)1930
Typical Power Gain (dB)17.5
Number of Elements per Chip1
Typical Drain Efficiency (%)30
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Output Capacitance @ Vds (pF)553.5@28V
Typical Reverse Transfer Capacitance @ Vds (pF)1.54@28V
Description
Trans RF FET N-CH 65V 5-Pin TO-270 W T/R
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