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MRF6VP2600HR5
MRF6VP2600HR5
RF FETs MRF6VP2600HR5
NXP
MRF6VP2600HR5
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height5.08(Max)
Package Length41.28(Max)
Output Power (W)600
Supplier PackageNI-1230
Mode of OperationCW|DVB-T OFDM|Pulsed RF
Process TechnologyLDMOS
Maximum Frequency (MHz)500
Minimum Frequency (MHz)2
Typical Power Gain (dB)24.5|22|25
Number of Elements per Chip2
Typical Drain Efficiency (%)28.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)110
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)1.7@50V
Typical Output Capacitance @ Vds (pF)101@50V
Typical Reverse Transfer Capacitance @ Vds (pF)1.7@50V
Description
Trans RF FET N-CH 110V 5-Pin NI-1230 T/R
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