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MRF6V2150NBR1
MRF6V2150NBR1
RF FETs MRF6V2150NBR1
NXP
MRF6V2150NBR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle Dual Drain Dual Gate
Package Width9.07(Max)
Package Height2.64(Max)
Package Length23.67(Max)
Output Power (W)150(Typ)
Supplier PackageTO-272 W
Mode of OperationCW
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)450
Minimum Frequency (MHz)10
Typical Power Gain (dB)32.3
Number of Elements per Chip1
Typical Drain Efficiency (%)78.7
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)110
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)163@50V
Typical Output Capacitance @ Vds (pF)93@50V
Typical Reverse Transfer Capacitance @ Vds (pF)1.6@50V
Description
Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R
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