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MRF373ALR1
MRF373ALR1
RF FETs MRF373ALR1
NXP
MRF373ALR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Output Power (W)75
Mode of OperationCW
Maximum Frequency (MHz)860
Minimum Frequency (MHz)470
Typical Power Gain (dB)18.2
Number of Elements per Chip1
Typical Drain Efficiency (%)60
Maximum Power Dissipation (mW)197000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)70
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)98.5@32V
Typical Output Capacitance @ Vds (pF)49@32V
Typical Reverse Transfer Capacitance @ Vds (pF)2@32V
Description
Trans RF MOSFET N-CH 70V 3-Pin NI-360 T/R
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