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RF FETs MRF13750H-915MHZ
NXP
MRF13750H-915MHZ
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8473.30.11.80 |
| Type | MOSFET |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Pin Count | 5 |
| PCB changed | 5 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Package Width | 10.29(Max) |
| Package Height | 4.83(Max) |
| Package Length | 41.28(Max) |
| Output Power (W) | 850(Typ) |
| Supplier Package | NI-1230H |
| Maximum IDSS (uA) | 10 |
| Mode of Operation | CW |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 1300 |
| Minimum Frequency (MHz) | 700 |
| Typical Power Gain (dB) | 20.5 |
| Typical Drain Efficiency (%) | 69.2 |
| Maximum Power Dissipation (mW) | 1333000 |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum Drain Source Voltage (V) | 105 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Typical Output Capacitance @ Vds (pF) | 63.8@50V |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.94@50V |
| Description |
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