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MMRF1306HR5
MMRF1306HR5
RF FETs MMRF1306HR5
NXP
MMRF1306HR5
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1306HR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.83(Max)
Package Length41.28(Max)
Output Power (W)1300(Typ)
Supplier PackageNI-1230
Maximum IDSS (uA)20
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)600
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)24
Number of Elements per Chip2
Typical Drain Efficiency (%)74
Maximum Power Dissipation (mW)1333000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)28
Typical Input Capacitance @ Vds (pF)562@50V
Typical Output Capacitance @ Vds (pF)185@50V
Typical Reverse Transfer Capacitance @ Vds (pF)2.8@50V
Description
Trans RF MOSFET N-CH 133V 5-Pin NI-1230 T/R
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