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MMBF4416LT1G
MMBF4416LT1G
RF FETs MMBF4416LT1G
onsemi
MMBF4416LT1G
--
Diodes, Transistors and Thyristors
RF FETs
MMBF4416LT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeJFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Maximum IDSS (uA)15000
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)225
Maximum Gate Source Voltage (V)30
Maximum Drain Source Voltage (V)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Forward Transconductance (S)0.0075(Max)
Typical Input Capacitance @ Vds (pF)4(Max)@15V
Typical Output Capacitance @ Vds (pF)2(Max)@15V
Maximum Gate Source Leakage Current (nA)1
Typical Reverse Transfer Capacitance @ Vds (pF)0.8(Max)@15V
Description
Trans RF FET N-CH 30V 3-Pin SOT-23 T/R
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