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RF FETs LET9070CB
STMicroelectronics
LET9070CB
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Loose |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 20(Typ) |
| Configuration | Single |
| Package Width | 6.1(Max) |
| Package Height | 4.45(Max) |
| Package Length | 20.57(Max) |
| Output Power (W) | 80(Typ) |
| Supplier Package | Case M-243 |
| Maximum IDSS (uA) | 1 |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 1000 |
| Typical Power Gain (dB) | 17 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 65 |
| Maximum Power Dissipation (mW) | 130000 |
| Maximum Gate Source Voltage (V) | 15 |
| Maximum Drain Source Voltage (V) | 80 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 12 |
| Typical Forward Transconductance (S) | 2.5(Min) |
| Typical Input Capacitance @ Vds (pF) | 78@28V |
| Typical Output Capacitance @ Vds (pF) | 42@28V |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.7@28V |
| Description |
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