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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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LET9060TR
LET9060TR
RF FETs LET9060TR
STMicroelectronics
LET9060TR
--
Diodes, Transistors and Thyristors
RF FETs
LET9060TR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Typ)
ConfigurationSingle
Package Width9.4
Package Height3.5
Package Length9.5
Output Power (W)80(Typ)
Supplier PackagePowerSO-10RF (Formed lead)
Maximum IDSS (uA)1
Process TechnologyLDMOS
Standard Package NamePowerSO-10RF (Formed lead)
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1000
Typical Power Gain (dB)17.2
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Typical Drain Efficiency (%)70
Maximum Power Dissipation (mW)95000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)80
Maximum Operating Temperature (°C)165
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)12
Typical Forward Transconductance (S)2.5(Min)
Typical Input Capacitance @ Vds (pF)77@28V
Typical Output Capacitance @ Vds (pF)39@28V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)1.2@28V
Description
Trans RF MOSFET N-CH 80V 12A 3-Pin PowerSO-10RF (Formed lead) T/R
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