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RF FETs LET20030C
STMicroelectronics
LET20030C
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Loose |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10(Min) |
| Configuration | Single |
| Package Width | 6.1(Max) |
| Package Height | 4.45(Max) |
| Package Length | 20.57(Max) |
| Output Power (W) | 45(Typ) |
| Supplier Package | Case M-243 |
| Mode of Operation | IS-97 CDMA |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 2000 |
| Typical Power Gain (dB) | 13.9 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 50 |
| Maximum Power Dissipation (mW) | 108000 |
| Maximum Gate Source Voltage (V) | 15 |
| Maximum Drain Source Voltage (V) | 80 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 9 |
| Typical Forward Transconductance (S) | 2.5(Min) |
| Typical Input Capacitance @ Vds (pF) | 58@28V |
| Typical Output Capacitance @ Vds (pF) | 29@28V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.8@28V |
| Description |
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