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RF FETs FA211801EV4XP
Infineon
FA211801EV4XP
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width23.37
Package Height4.11
Package Length34.04
Output Power (W)180
Supplier PackageCase 30260
Maximum IDSS (uA)10
Mode of Operation2-Carrier W-CDMA|CW
Process TechnologyLDMOS
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)15.5
Number of Elements per Chip1
Typical Drain Efficiency (%)38.5
Maximum Power Dissipation (mW)565000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (MOhm)50(Typ)@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V 3-Pin Case 30260 Tray
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