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BLF888D
BLF888D
RF FETs BLF888D
NXP
BLF888D
--
Diodes, Transistors and Thyristors
RF FETs
BLF888D.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR40
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.7(Max)
Package Length41.28(Max)
Output Power (W)250(Typ)
Supplier PackageSOT-539A
Maximum IDSS (uA)2.8
Mode of OperationClass AB
Process TechnologyLDMOS
Maximum Frequency (MHz)860
Minimum Frequency (MHz)470
Typical Power Gain (dB)21
Number of Elements per Chip2
Typical Drain Efficiency (%)45
Maximum Gate Source Voltage (V)11
Maximum Drain Source Voltage (V)104
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)210@50V
Typical Output Capacitance @ Vds (pF)70@50V
Maximum Drain Source Resistance (mOhm)120(Typ)@6.15V
Maximum Gate Source Leakage Current (nA)280
Typical Reverse Transfer Capacitance @ Vds (pF)1.3@50V
Description
Trans RF MOSFET N-CH 104V 5-Pin SOT-539A
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