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RF FETs BLF346,112
NXP
BLF346,112
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Diodes, Transistors and Thyristors
RF FETs
BLF346,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSSupplier Unconfirmed
MountingScrew
ECCN (US)EAR99
PackagingBlister
Pin Count6
AutomotiveUnknown
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR50
ConfigurationSingle Quad Source
Package Width12.86(Max)
Package Height7.39(Max)
Package Length24.89(Max)
Output Power (W)30(Typ)
Supplier PackageCDFM
Mode of OperationClass-A
Maximum Frequency (MHz)224.25
Minimum Frequency (MHz)170
Typical Power Gain (dB)16.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)130000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)13
Typical Forward Transconductance (S)4.2
Typical Input Capacitance @ Vds (pF)225@28V
Typical Output Capacitance @ Vds (pF)180@28V
Maximum Drain Source Resistance (mOhm)300@10V
Typical Reverse Transfer Capacitance @ Vds (pF)25@28V
Description
Trans RF FET N-CH 65V 13A 6-Pin CDFM Blister
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