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RF FETs BLF1820-70,135
NXP
BLF1820-70,135
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Supplier Unconfirmed |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 3 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Single |
| Package Width | 9.91(Max) |
| Package Height | 4.72(Max) |
| Package Length | 34.16(Max) |
| Output Power (W) | 65 |
| Supplier Package | SOT-502A |
| Mode of Operation | 2-Tone Class-AB |
| Process Technology | LDMOS |
| Standard Package Name | SOT |
| Maximum Frequency (MHz) | 2000 |
| Minimum Frequency (MHz) | 1800 |
| Typical Power Gain (dB) | 11(Min) |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 30(Min) |
| Maximum Gate Source Voltage (V) | ±15 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 9 |
| Typical Forward Transconductance (S) | 4.2 |
| Maximum Drain Source Resistance (mOhm) | 150(Typ)@14.5V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3.4 |
| Description |
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