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BLC8G27LS-60AV
BLC8G27LS-60AV
RF FETs BLC8G27LS-60AV
NXP
BLC8G27LS-60AV
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count6
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height4.01(Max)
Package Length20.7(Max)
Output Power (W)50(Typ)
Supplier PackageDFM
Maximum IDSS (uA)1.2
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2690
Minimum Frequency (MHz)2300
Typical Power Gain (dB)14.7
Number of Elements per Chip2
Typical Drain Efficiency (%)44
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.35
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)0.4
Maximum Drain Source Resistance (MOhm)3.47@6.1V
Maximum Gate Source Leakage Current (nA)120
Description
Trans RF MOSFET N-CH 65V 6-Pin DFM
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