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BLA1011-2,112
BLA1011-2,112
RF FETs BLA1011-2,112
NXP
BLA1011-2,112
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle
Package Width4.14(Max)
Package Height2.95(Max)
Package Length5.16(Max)
Output Power (W)2
Supplier PackageCDIP SMD
Mode of OperationClass AB
Process TechnologyLDMOS
Maximum Frequency (MHz)1090
Minimum Frequency (MHz)1030
Typical Power Gain (dB)16(Min)
Number of Elements per Chip1
Maximum Power Dissipation (mW)10000
Maximum Gate Source Voltage (V)±15
Maximum Drain Source Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)2.2
Typical Forward Transconductance (S)0.5
Typical Input Capacitance @ Vds (pF)11@26V
Typical Output Capacitance @ Vds (pF)9@26V
Maximum Drain Source Resistance (mOhm)1200(Typ)@10V
Typical Reverse Transfer Capacitance @ Vds (pF)0.5@26V
Description
Trans RF MOSFET N-CH 75V 2.2A 3-Pin CDIP SMD Bulk
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