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RF FETs BG5412KE6327XT
Infineon
BG5412KE6327XT
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Part Status | Obsolete |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Dual Common Source |
| Typical Power Gain (dB) | 34@Amp A|31@Amp B |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum Gate Source Voltage (V) | ±6 |
| Maximum Drain Source Voltage (V) | 8 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.025 |
| Typical Forward Transconductance (S) | 0.033@Amp A|0.03@Amp B |
| Typical Input Capacitance @ Vds (pF) | 2.2@5V@Gate 1@Amp A|2@5V@Gate 1@Amp B |
| Typical Output Capacitance @ Vds (pF) | 0.9@5V@Amp A|0.8@5V@Amp B |
| Description |
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