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BF1216,115
BF1216,115
RF FETs BF1216,115
NXP
BF1216,115
--
Diodes, Transistors and Thyristors
RF FETs
BF1216,115.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Supplier PackageTSSOP
Maximum IDSS (uA)0.024
Standard Package NameSOP
Typical Power Gain (dB)34
Number of Elements per Chip2
Maximum Power Dissipation (mW)180
Maximum Drain Source Voltage (V)6
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.03
Typical Forward Transconductance (S)0.027
Typical Input Capacitance @ Vds (pF)2.4@5V@Gate 2|2.5@5V@Gate 1
Typical Output Capacitance @ Vds (pF)0.8
Maximum Gate Source Leakage Current (nA)20@Gate 2|50@Gate 1
Typical Reverse Transfer Capacitance @ Vds (pF)0.025
Description
Trans RF MOSFET N-CH 6V 0.03A 6-Pin TSSOP T/R
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