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RF FETs AFT26HW050GSR3
NXP
AFT26HW050GSR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 9 |
| Automotive | No |
| PCB changed | 9 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Dual Common Source |
| Package Width | 9.91(Max) |
| Package Height | 4.32(Max) |
| Package Length | 20.7(Max) |
| Output Power (W) | 9(Typ) |
| Supplier Package | NI-780-4S4 |
| Maximum IDSS (uA) | 10 |
| Mode of Operation | 1-Carrier W-CDMA |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 2690 |
| Minimum Frequency (MHz) | 2620 |
| Typical Power Gain (dB) | 14.2 |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 47.1 |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 225 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Description |
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