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AFT09S200W02SR3
AFT09S200W02SR3
RF FETs AFT09S200W02SR3
NXP
AFT09S200W02SR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
Pin Count2
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
Output Power (W)56(Typ)
Maximum IDSS (uA)10
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)960
Minimum Frequency (MHz)920
Typical Power Gain (dB)19.4
Typical Drain Efficiency (%)35.6
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)70
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 70V 2-Pin T/R
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