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RF FETs A2G35S200-01SR3
NXP
A2G35S200-01SR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | 3A001b.3.a. |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Package Width | 9.86(Max) |
| Package Height | 4.14(Max) |
| Package Length | 10.29(Max) |
| Output Power (W) | 40 |
| Supplier Package | NI-400S-2S |
| Mode of Operation | 1-Carrier W-CDMA |
| Maximum Frequency (MHz) | 3600 |
| Minimum Frequency (MHz) | 3400 |
| Typical Power Gain (dB) | 16.1 |
| Typical Drain Efficiency (%) | 35.3 |
| Maximum Gate Source Voltage (V) | 0 |
| Maximum Drain Source Voltage (V) | 125 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Description |
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