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A2G22S190-01SR3
A2G22S190-01SR3
RF FETs A2G22S190-01SR3
NXP
A2G22S190-01SR3
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialGaN
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Maximum VSWR10
Output Power (W)36(Typ)
Mode of Operation1-Carrier W-CDMA
Maximum Frequency (MHz)2200
Minimum Frequency (MHz)1800
Typical Power Gain (dB)16.8
Typical Drain Efficiency (%)38.5
Maximum Gate Source Voltage (V)0
Maximum Drain Source Voltage (V)125
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Description
Trans RF MOSFET 125V T/R
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