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MPSH10RLRAG
MPSH10RLRAG
RF BJT MPSH10RLRAG
onsemi
MPSH10RLRAG
--
Diodes, Transistors and Thyristors
RF BJT
MPSH10RLRAG.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain60@4mA@10V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)350000
Typical Output Capacitance (pF)0.7(Max)
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)650(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Junction Case Thermal Resistance125°C/W
Maximum Collector-Emitter Voltage Range (V)20 to 30
Maximum Junction Ambient Thermal Resistance357°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.4mA@4mA
Description
Trans RF BJT NPN 25V 350000mW 3-Pin TO-92 T/R
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