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RF BJT BFY740B01PB4SA1
Infineon
BFY740B01PB4SA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | NRND |
| Configuration | Single Dual Emitter |
| Package Width | 1.88(Max) |
| Package Height | 1.1(Max) |
| Package Length | 1.88(Max) |
| Supplier Package | Micro-X |
| Minimum DC Current Gain | 130@20mA@3V |
| Typical Power Gain (dB) | 24 |
| Maximum Noise Figure (dB) | 1(Typ) |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 3V/20mA |
| Minimum DC Current Gain Range | 120 to 200 |
| Typical Input Capacitance (pF) | 0.6 |
| Typical Output Capacitance (pF) | 0.07 |
| Maximum DC Collector Current (A) | 0.03 |
| Maximum Emitter Base Voltage (V) | 1.2 |
| Maximum Collector Base Voltage (V) | 13 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Emitter Cut-Off Current (nA) | 5000 |
| Maximum Collector-Emitter Voltage (V) | 4 |
| Maximum Collector Cut-Off Current (nA) | 10000 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Description |
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