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BFY420(P)
BFY420(P)
RF BJT BFY420(P)
Infineon
BFY420(P)
--
Diodes, Transistors and Thyristors
RF BJT
BFY420(P).pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.78
Package Height0.95
Package Length1.78
Supplier PackageMicro-X
Standard Package NameMicro-X
Minimum DC Current Gain50@5mA@1V
Typical Power Gain (dB)21
Number of Elements per Chip1
Operational Bias Conditions2V/20mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)160
Typical Input Capacitance (pF)0.67
Typical Output Capacitance (pF)0.14
Maximum DC Collector Current (A)0.035
Maximum Emitter Base Voltage (V)1.5
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)22000(Typ)
Maximum Operating Temperature (°C)175
Maximum Power 1dB Compression (dBm)12(Typ)
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)20000
Maximum Collector-Emitter Voltage (V)4.5
Maximum Collector Cut-Off Current (nA)30
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4.5V 0.035A 4-Pin Micro-X
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