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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BFP843H6327XTSA1
BFP843H6327XTSA1
RF BJT BFP843H6327XTSA1
Infineon
BFP843H6327XTSA1
--
Diodes, Transistors and Thyristors
RF BJT
BFP843H6327XTSA1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain150@15mA@1.8V
Typical Power Gain (dB)24.5
Maximum Noise Figure (dB)1.85
Number of Elements per Chip1
Operational Bias Conditions1.8V/15mA
Minimum DC Current Gain Range120 to 200
Maximum Power Dissipation (mW)125
Typical Input Capacitance (pF)0.73
Typical Output Capacitance (pF)5.23
Maximum DC Collector Current (A)0.055
Maximum Collector Base Voltage (V)2.9
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)8.5(Typ)
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)2.25
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)24(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 2.25V 0.055A 125mW Automotive 4-Pin(3+Tab) SOT-343 T/R
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