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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BFP182WH6327XTSA1
BFP182WH6327XTSA1
RF BJT BFP182WH6327XTSA1
Infineon
BFP182WH6327XTSA1
--
Diodes, Transistors and Thyristors
RF BJT
BFP182WH6327XTSA1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain70@10mA@8V
Typical Power Gain (dB)22
Maximum Noise Figure (dB)1.3(Typ)
Number of Elements per Chip1
Operational Bias Conditions8V/10mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)250
Typical Input Capacitance (pF)0.8
Typical Output Capacitance (pF)0.34
Maximum DC Collector Current (A)0.035
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.035A 250mW Automotive 4-Pin(3+Tab) SOT-343 T/R
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