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RF BJT BFP 840FESD H6327
Infineon
BFP 840FESD H6327
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Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Material | SiGe |
| ECCN (US) | EAR99 |
| Automotive | Yes |
| Part Status | Unconfirmed |
| Configuration | Single Dual Emitter |
| Minimum DC Current Gain | 150@10mA@1.8V |
| Typical Power Gain (dB) | 35 |
| Maximum Noise Figure (dB) | 1.3(Typ) |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 1.8V/10mA |
| Minimum DC Current Gain Range | 120 to 200 |
| Maximum Power Dissipation (mW) | 75 |
| Typical Input Capacitance (pF) | 0.37 |
| Typical Output Capacitance (pF) | 0.038 |
| Maximum DC Collector Current (A) | 0.035 |
| Maximum Collector Base Voltage (V) | 2.9 |
| Maximum Transition Frequency (MHz) | 85000(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Emitter Cut-Off Current (nA) | 10000 |
| Maximum Collector-Emitter Voltage (V) | 2.25 |
| Maximum Collector Cut-Off Current (nA) | 400 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum 3rd Order Intercept Point (dBm) | 22.5(Typ) |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Description |
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