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VEMT4700F-GS08
VEMT4700F-GS08
Phototransistors VEMT4700F-GS08
Vishay
VEMT4700F-GS08
--
Optoelectronics
Phototransistors
VEMT4700F-GS08.pdf
Specification
Product AttributeAttribute Value
HTS8541497080
PPAPNo
TypeChip
EU RoHSCompliant
MaterialSilicon
MountingSurface Mount
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeJ-Lead
PCB changed3
Part StatusActive
Package Width3
Cut-Off FilterVisible Cut-off
Package Length2.8
Lens Shape TypeFlat
Supplier PackagePLCC
Viewing OrientationTop View
Peak Wavelength (nm)940
Phototransistor TypePhototransistor
Standard Package NameLCC
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)2000(Typ)
Maximum Rise Time (ns)6000(Typ)
Maximum Dark Current (nA)200
Maximum Light Current (uA)500(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)120
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3
Description
Phototransistor Chip Silicon 940nm 3-Pin PLCC T/R
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